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HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C, Chip capability Terminal current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C
IXFN 340N07
VDSS ID25
RDS(on)
= 70 V = 340 A = 4 m 200 ns
D
trr
G S S
Maximum Ratings 70 70 20 30 340 100 1360 200 64 4 10 700 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A A mJ J V/ns W C C C V~ V~
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D
G = Gate S = Source
D = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Features
* International standard package * miniBLOC, with Aluminium nitride * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) * Low package inductance * Fast intrinsic Rectifier
Applications rated isolation
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 70 2.0 4.0 200 TJ = 25C TJ = 125C 100 2 4 V V nA A mA m
VDSS VGH(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V V GS = 10 V, ID = 100A Pulse test, t 300 s, duty cycle d 2 %
* DC-DC converters * Battery chargers * Switched-mode and resonant-mode * DC choppers * Temperature and lighting controls * Linear current regulators
Advantages power supplies
* Easy to mount * Space savings * High power density
DS98547D(05/04)
(c) 2004 IXYS All rights reserved
IXFN 340N07
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 80 98 12200 VGS = 0 V, VDS = 25 V, f = 1 MHz 7100 3340 100 VGS = 10 V, VDS = 0.5 * VDSS, ID = 100A RG = 1 (External) 95 200 33 490 VGS = 10 V, VDS = 50 V, ID = 100A 72 266 0.18 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W
A B C D E F G H J K L M N O P Q R S T U
miniBLOC, SOT-227 B
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 60A, pulse test
M4 screws (4x) supplied
Dim. Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 340 1360 1.2 100 1.4 8 200 A A V ns C A
IF = 100A, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 50A, -di/dt = 100 A/s, VR = 50V TJ = 25C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,306,728 B1 6,534,343 6,259,123 B1 6,404,065 B1 6,583,505 6,683,344 6,710,405B2
IXFN 340N07
Fig. 1. Output Characteristics @ 25 Deg. C
240 200 ID - Amperes 160 120 80 40 0 0 0.3 0.6 0.9 V DS - Volts 1.2 1.5
Fig. 2. Output Characteristics @ 125 Deg. C
240 VGS=10V 9V 8V 7V
ID - Amperes
VGS=10V 9V 8V 7V
200 6V 160 120 80 40 0 0
6V
5V
5V
0.4
0.8
1.2
1.6
2
VDS - Volts
Fig. 3. Temperature Dependence of RDS(ON)
5.5 5 4.5 RDS(ON) - Ohm 4 3.5 3 2.5 2 -50 RDS(ON) - Normalized
Fig. 4. RDS(ON) Normalized to I L(RMS) Value vs. Junction Temperature
1.8 1.6 1.4 1.2 ID=200A 1 ID=100A 0.8 0.6
ID=200A ID=100A
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
TJ - Degrees Centigrade
TJ - Degrees Centigrade
Fig. 5. RDS(ON) Normalized to I L(RMS) Value vs. I D
1.6 1.5 RDS(ON) - Normalized 1.4 1.3 1.2 1.1 1 0.9 0 50 100 150 ID - Amperes 200 250 TJ=25C TJ=125C BVDSS & VGS(TH) - Normalized 1.2
Fig. 6. Temperature dependence of Breakdown & Threshold Voltage
VGS(TH) 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50
BVDSS
75
100 125 150
TJ - Degrees Centigrade
(c) 2004 IXYS All rights reserved
IXFN 340N07
Fig. 7. Input Admittance
250 200 GFS - Siemens ID - Amperes 150 100 50 0 2.5 3 3.5 4 4.5 5 5.5 6 VGS - Volts TJ= -40C 25C 125C 180 150 120 90 60 30 0 0 40 80 120 160 ID - Amperes 200 240 TJ=25
Fig. 8. Transconductance
Fig. 9. Source Current vs. Source-ToDrain Voltage
-240 -200
Fig. 10. Gate Charge
10 VDS=50V 8
V GS - Volts
IS - Amperes
ID=100A IG=10mA
-160 -120 -80
6 4 2 0
TJ=125C TJ=25C
-40 0 -0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1
0
100
200
300
400
500
VSD - Volts
QG - nanoCoulom bs
Fig. 11. Capacitance
100000 f=100kHz Capacitance - pF R(TH)JC - (C/W)
Fig. 12. Transient Thermal Resistance
1
0.1
Ciss 10000 Coss Crss
0.01
1000 0 10 20 VDS - Volts 30 40
0.001 1 10 100 1000 Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 340N07
Fig. 13. Forward-Bias Safe Operating Area
10,000 TC = 25C TJ = 150C I D - Amperes 1,000 R DS(on) Limit 100s 1ms 100 DC 10ms
10 1 10 VD S - Volts 100
(c) 2004 IXYS All rights reserved

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